? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c9a i dm t c = 25 c, pulse width limited by t jm 48 a i ar t c = 25 c8a e ar t c = 25 c30mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 5 ? p d t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c v isol 50/60 hz, rms, t = 1, leads-to-tab 2500 v~ f c mounting force 11..65/2.5..15 n/lb weight 2g ds99604e(07/06) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = i t, (note 1) 650 m ? pulse test, t 300 s, duty cycle d 2 % ixfc 16n80p v dss = 800 v i d25 = 9 a r ds(on) 650 m ? ? ? ? ? t rr 250 ns n-channel enhancement mode fast intrinsic diode avalanche rated polarhv tm hiperfet power mosfet isoplus220 tm (electrically isolated back surface) features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<35pf) z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z fast intrinsic rectifier applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly: no screws, or isolation foils required z space savings z high power density z low collector capacitance to ground (low emi) isolated back surface g = gate d = drain s = source isoplus220 tm (ixfc) e153432 g d s advance technical information
ixfc 16n80p ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = i t , pulse test 9 16 s c iss 4600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 330 pf c rss 23 pf t d(on) 27 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i t 32 ns t d(off) r g = 5 ? (external) 75 ns t f 29 ns q g(on) 71 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 21 nc q gd 23 nc r thjc 0.82 c/w r thcs 0.21 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 16 a i sm repetitive 48 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 16 a, -di/dt = 100 a/ s 250 ns i rm v r = 100 v, v gs = 0 v 7 a q rm 0.8 c isoplus220 tm (ixfc) outline ref: ixys co 0177 r0 note: bottom heatsink (pin 4) is electrically isolated from pin 1,2, or 3. note 1: test current i t = 8 a advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
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